SK hynix-NAND flash
SEOUL, August 25 (Yonhap) – South Korean semiconductor company SK hynix announced on Monday that it has started large-scale manufacturing of a new quad-level cell (QLC) NAND memory, aiming to meet the increasing demand for advanced performance in AI-related technologies.
The 321-layer 2TB QLC1 NAND flash device has seen double the data transfer rate, with write and read speeds increasing by 56% and 18%, respectively, as reported by the company.
"This milestone represents the world's initial use of over 300 layers with QLC technology, establishing a new standard for NAND storage capacity," SK hynix stated.
"The company intends to launch the product during the first half of next year after finishing global customer testing," it stated.
SK Hynix announced that it created the 2TB drive to boost cost efficiency. This latest offering enables more efficient parallel computing and greatly improves concurrent reading capabilities.
NAND flash storage devices are commonly found in smartphones and computers. In contrast to mobile dynamic random access memory (DRAM), flash memory retains information without requiring an ongoing power source.
"Thanks to mass production, we've greatly enhanced our range of high-volume products and ensured competitive pricing," stated Jeong Woop-yo, head of SK hynix's NAND development.
"We will take a significant step ahead as an integrated AI memory solution provider, aligned with the rapid increase in AI demand and the need for superior performance in the data center industry," he further stated.
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